Cambridge scientists have developed a new prototype for computer memory that could make for faster chips that could hold up to 100 times more data. The system is made up of barium bridges between films of a disordered material.
Pretty much, but they aim to have a continuos range, so they might be able to keep improving the information density by having more accurate readouts across that range.
That’s exactly how NAND flash works though… it’s a continuous range of voltages and they just subdivide it into how ever many bits they want.
The article mentions something about being able to nudge the voltage up and down with this new tech, I guess as opposed to setting to 0 and then writing again, but it’s not clear how that would allow for more bits per cell over NAND rather than just being faster from not needing to erase and write…
Pretty much, but they aim to have a continuos range, so they might be able to keep improving the information density by having more accurate readouts across that range.
That’s exactly how NAND flash works though… it’s a continuous range of voltages and they just subdivide it into how ever many bits they want.
The article mentions something about being able to nudge the voltage up and down with this new tech, I guess as opposed to setting to 0 and then writing again, but it’s not clear how that would allow for more bits per cell over NAND rather than just being faster from not needing to erase and write…